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BC557B,112

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BC557B,112

TRANS PNP 45V 0.1A TO92-3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

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NXP USA Inc. BC557B-112 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 45V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 100MHz and a power dissipation of 500mW, it offers robust performance for various electronic designs. The DC current gain (hFE) is specified at a minimum of 220 at 2mA and 5V. The transistor is housed in a TO-92-3 package, suitable for through-hole mounting. Typical applications include consumer electronics, industrial control systems, and automotive electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max500 mW

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