BC556B,112
TRANS PNP 65V 0.1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BC556B-112 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 65 V and a continuous collector current capability of up to 100 mA. The transistor exhibits a minimum DC current gain (hFE) of 220 at 2 mA collector current and 5 V collector-emitter voltage, with a transition frequency of 100 MHz. Maximum power dissipation is rated at 500 mW. The device is housed in a TO-92-3 package, suitable for through-hole mounting. Typical applications include consumer electronics, industrial control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 500 mW |
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