BC556A,112
BJT TO92 65V 100MA PNP 0.5W 150CManufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor (BJT) for general-purpose amplification and switching applications. This TO-92-3 packaged device offers a collector-emitter breakdown voltage of 65V and a maximum continuous collector current of 100mA. With a transition frequency of 100MHz and a power dissipation of 500mW, it is suitable for use in consumer electronics and industrial control systems. Key specifications include a minimum DC current gain (hFE) of 125 at 2mA, 5V and a Vce(sat) of 650mV at 5mA, 100mA. The operating temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 500 mW |
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