BC550C,112
TRANS NPN 45V 0.1A TO-92Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. BC550C-112 is a general-purpose NPN bipolar junction transistor (BJT) designed for a wide range of applications. This component features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 100mA. With a transition frequency of 100MHz and a minimum DC current gain (hFE) of 420 at 2mA/5V, it is suitable for amplification and switching circuits. The transistor dissipates a maximum power of 500mW and operates effectively within a junction temperature range of -55°C to 150°C. Packaged in a TO-92-3 (TO-226AA) through-hole configuration, the BC550C-112 is commonly utilized in consumer electronics, industrial control systems, and telecommunications equipment. The saturation voltage (Vce Saturation) is specified at 600mV maximum for 5mA base current and 100mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 500 mW |
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