BC549C,112
TRANS NPN 30V 0.1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc.'s BC549C-112 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 100mA. The BC549C-112 offers a significant DC current gain (hFE) of at least 420 at 2mA collector current and 5V collector-emitter voltage, with a transition frequency of 100MHz. It is rated for a maximum power dissipation of 500mW. The transistor is housed in a TO-92-3 (TO-226-3) package, suitable for through-hole mounting. Typical applications include low-power audio amplification, switching circuits, and general analog signal processing across consumer electronics and industrial control systems. The device operates within an extended temperature range up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 500 mW |
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