BC517,112
TRANS NPN DARL 30V 0.5A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. presents the BC517-112, a high-gain NPN Darlington bipolar junction transistor. This component is designed for applications requiring significant current amplification, with a minimum DC current gain (hFE) of 30000 at 20mA and 2V. It offers a collector-emitter breakdown voltage of 30V and a continuous collector current capability of up to 500mA. The BC517-112 features a transition frequency of 220MHz and a maximum power dissipation of 625mW. Packaged in a TO-92-3 (TO-226-3) through-hole configuration with formed leads, this device is suitable for various industrial and consumer electronics applications where low saturation voltage (1V @ 100µA, 100mA) and high gain are critical parameters. Operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30000 @ 20mA, 2V |
| Frequency - Transition | 220MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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