BC369,112
TRANS PNP 20V 1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor (BJT), part number BC369-112. This through-hole component is housed in a TO-92-3 package and offers a collector-emitter breakdown voltage of 20V and a maximum collector current of 1A. It features a transition frequency of 140MHz and a maximum power dissipation of 830mW. The DC current gain (hFE) is a minimum of 85 at 500mA and 1V. The collector cutoff current (ICBO) is a maximum of 100nA. Vce saturation is specified at 500mV maximum for 100mA base current and 1A collector current. This device is suitable for applications within the consumer electronics and industrial control sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 830 mW |
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