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BC337-40,412

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BC337-40,412

BJT TO92 45V NPN 0.625W 150C

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

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NXP USA Inc. BC337-40-412 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 500mA, with a maximum power dissipation of 625mW. The BC337-40-412 exhibits a minimum DC current gain (hFE) of 250 at 100mA collector current and 1V collector-emitter voltage, and a transition frequency of 100MHz. It is supplied in a TO-92-3 through-hole package, suitable for mounting on printed circuit boards. The operating junction temperature range is up to 150°C. This device finds application in consumer electronics, industrial control systems, and power management circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA, 1V
Frequency - Transition100MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max625 mW

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