BC337-25,116
TRANS NPN 45V 0.5A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BC337-25-116 is a bipolar junction transistor (BJT) with an NPN configuration. This component features a maximum collector current (Ic) of 500 mA and a collector-emitter breakdown voltage (Vce) of 45 V. The device offers a minimum DC current gain (hFE) of 160 at 100 mA and 1 V, with a transition frequency (fT) of 100 MHz. It has a maximum power dissipation of 625 mW and a saturation voltage (Vce(sat)) of 700 mV at 50 mA collector current and 500 mA base current. Packaged in a TO-92-3 (TO-226-3) through-hole configuration, supplied on tape and reel, this transistor is suitable for applications in consumer electronics and various industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 625 mW |
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