BC337-25,112
BJT TO92 45V NPN 0.625W 150CManufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. NPN Bipolar Junction Transistor (BJT) with part number BC337-25-112. This through-hole component is housed in a TO-92-3 package and features a collector-emitter breakdown voltage of 45V. It offers a maximum collector current of 500mA and a power dissipation of 625mW. The transition frequency is specified at 100MHz. The device exhibits a minimum DC current gain (hFE) of 160 at 100mA collector current and 1V collector-emitter voltage. Saturation voltage (Vce) is 700mV at 50mA base current and 500mA collector current. The maximum operating junction temperature is 150°C. This component is commonly utilized in general-purpose amplification and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 625 mW |
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