BC327-40,112
BJT TO92 45V PNP 0.625W 150CManufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor (BJT) BC327-40-112, packaged in a TO-92-3 (TO-226-3) through-hole configuration. This device offers a maximum collector-emitter voltage (Vce) of 45V and a continuous collector current (Ic) of 500mA. The minimum DC current gain (hFE) is specified at 250 when operating at 100mA collector current and 1V collector-emitter voltage. With a transition frequency (fT) of 80MHz, it is suitable for general-purpose amplification and switching applications. The maximum power dissipation is 625mW, and it can operate at junction temperatures up to 150°C. Key parameters include a Vce(sat) of 700mV at 50mA base current and 500mA collector current, and a collector cutoff current (ICBO) of 100nA. Applications include consumer electronics and industrial control systems. Available in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 625 mW |
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