BC327-25,112
BJT TO92 45V PNP 0.625W 150CManufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. BC327-25-112 is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 (TO-226AA) package. This device offers a collector-emitter breakdown voltage of 45V and a maximum collector current of 500mA. With a power dissipation capability of 625mW, it operates reliably up to a junction temperature of 150°C. Key electrical specifications include a minimum DC current gain (hFE) of 160 at 100mA and 1V, a transition frequency of 80MHz, and a Vce saturation of 700mV at 50mA and 500mA. The collector cutoff current (ICBO) is a maximum of 100nA. This component finds application in various industrial and consumer electronics, including general-purpose amplification and switching circuits. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 625 mW |
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