A6G35H075NT2
RF POWERManufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
Quality Control: Learn More
NXP USA Inc. A6G35H075NT2 is a Bipolar Junction Transistor (BJT) designed for RF power applications. This component is engineered for high-frequency performance and power amplification, making it suitable for demanding wireless infrastructure and telecommunications systems. Its robust construction and optimized semiconductor characteristics ensure reliable operation in challenging RF environments. The A6G35H075NT2 is supplied in a Tape & Reel (TR) package, facilitating automated assembly processes. This transistor is a key component in the design of power amplifiers, frequency multipliers, and other signal processing circuits where efficient power handling at radio frequencies is paramount.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
Request a Quote
Clients Also Buy
PN2222A,126
TRANS NPN 40V 0.6A TO92-3
BC327-25,116
TRANS PNP 45V 0.5A TO92-3
PHD13003C,126
TRANS NPN 400V 1.5A SOT54
