2PD602AS,115
TRANS NPN 50V 0.5A SMT3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. Bipolar Transistor, NPN, 2PD602AS-115. This NPN Bipolar Junction Transistor (BJT) is rated for a collector-emitter breakdown voltage of 50V and a continuous collector current of up to 500mA. It features a transition frequency of 180MHz and a maximum power dissipation of 250mW. The device offers a minimum DC current gain (hFE) of 170 at 150mA and 10V. Collector cutoff current is a maximum of 10nA. The Vce(sat) is 600mV at 30mA/300mA. Packaged in SMT3 (MPAK), specifically TO-236-3, SC-59, SOT-23-3, this component is supplied on tape and reel. It is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 170 @ 150mA, 10V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
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