2PD602AR,115
TRANS NPN 50V 0.5A SMT3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. NPN Bipolar Junction Transistor (BJT), part number 2PD602AR-115. This SMT3 packaged device offers a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. It features a transition frequency of 160MHz and a maximum power dissipation of 250mW. Key parameters include a saturation voltage of 600mV at 30mA base current and 300mA collector current, and a minimum DC current gain (hFE) of 120 at 150mA collector current and 10V collector-emitter voltage. The leakage current (ICBO) is specified at a maximum of 10nA. This component is designed for surface mounting and operates within a junction temperature range of 150°C. It is commonly utilized in industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 150mA, 10V |
| Frequency - Transition | 160MHz |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
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