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2PD601AR,115

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2PD601AR,115

TRANS NPN 50V 0.1A SMT3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. Bipolar Junction Transistor, NPN type. Part number 2PD601AR-115. This component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It features a high DC current gain (hFE) of 210 minimum at 2mA collector current and 10V collector-emitter voltage. The transition frequency is 100MHz, with a maximum power dissipation of 250mW. The device operates at junction temperatures up to 150°C. It is supplied in a SMT3; MPAK package for surface mounting, specifically the TO-236-3, SC-59, SOT-23-3 footprint. The typical saturation voltage (Vce(sat)) is 250mV at 10mA base current and 100mA collector current. This component is commonly utilized in industrial and consumer electronics applications requiring robust switching and amplification capabilities. Packaged in Tape & Reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce210 @ 2mA, 10V
Frequency - Transition100MHz
Supplier Device PackageSMT3; MPAK
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max250 mW

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