2PD601AQW,115
TRANS NPN 50V 0.1A SC70Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. NPN Bipolar Junction Transistor, 2PD601AQW-115. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 160 at 2mA, 10V and a transition frequency of 100MHz. The device is housed in an SC-70 (SOT-323) surface-mount package, designed for operation up to 150°C. Key parameters include a Vce(sat) of 250mV at 10mA, 100mA and a collector cutoff current (ICBO) of 10nA. The maximum power dissipation is 200mW. This transistor is suitable for applications in consumer electronics and industrial control systems. Supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 2mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-70 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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