2PC4617R,135
TRANS NPN 50V 0.15A SC75Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. NPN Bipolar Junction Transistor (BJT), part number 2PC4617R-135. This surface mount device is housed in an SC-75 (SOT-416) package. It features a 50V collector-emitter breakdown voltage and a maximum collector current of 150mA. The transistor offers a transition frequency of 100MHz and a minimum DC current gain (hFE) of 180 at 1mA collector current and 6V Vce. Power dissipation is rated at 150mW, with a maximum collector cutoff current (ICBO) of 100nA. The saturation voltage (Vce(sat)) is a maximum of 200mV at 5mA base current and 50mA collector current. This component is suitable for applications operating at temperatures up to 150°C. It is supplied in tape and reel packaging. Typical industry applications include general-purpose switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 1mA, 6V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
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