2PC4617R,115
TRANS NPN 50V 0.15A SC75Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. 2PC4617R-115 is a general-purpose NPN bipolar junction transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50 V and a continuous collector current capability of up to 150 mA. With a transition frequency of 100 MHz and a maximum power dissipation of 150 mW, it is suitable for various signal amplification and switching tasks. Key specifications include a low collector cutoff current of 100 nA (ICBO) and DC current gain (hFE) of at least 180 at 1 mA and 6 V. The Vce saturation voltage is a maximum of 200 mV at 5 mA collector current and 50 mA base current. The transistor is housed in an SC-75 (SOT-416) package and supplied on tape and reel. This device finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 1mA, 6V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
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