2PC4617Q,115
TRANS NPN 50V 0.15A SC75Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. 2PC4617Q-115 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a 50V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 150mA. It features a transition frequency of 100MHz and a maximum power dissipation of 150mW. The DC current gain (hFE) is a minimum of 120 at 1mA collector current and 6V Vce. Collector cutoff current (ICBO) is specified at a maximum of 100nA. Saturation voltage (Vce Sat) is a maximum of 200mV at 5mA base current and 50mA collector current. Provided in a SC-75 (SOT-416) package, this device is supplied on tape and reel. It is suitable for various industrial and consumer electronics applications requiring general-purpose amplification and switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
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