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2PC1815GR,126

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2PC1815GR,126

TRANS NPN 50V 0.15A TO92-3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. 2PC1815GR-126 is an NPN bipolar junction transistor. This component features a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 150 mA. The transistor exhibits a minimum DC current gain (hFE) of 200 at 2 mA collector current and 6 V collector-emitter voltage. Its transition frequency is 80 MHz, and it can dissipate up to 500 mW of power. The saturation voltage (Vce(sat)) is a maximum of 300 mV at 10 mA base current and 100 mA collector current. The collector cutoff current (ICBO) is a maximum of 100 nA. This device is packaged in a TO-92-3 (TO-226-3, TO-92-3 Formed Leads) through-hole package, supplied on tape and box. The operating junction temperature range is up to 150°C. This transistor is commonly utilized in general-purpose amplification and switching applications across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Frequency - Transition80MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)150 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW

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