2PC1815GR,116
TRANS NPN 50V 0.15A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. 2PC1815GR-116 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 50 V and a continuous collector current capability of 150 mA. The device features a transition frequency of 80 MHz and a maximum power dissipation of 500 mW. Exhibiting a minimum DC current gain (hFE) of 200 at 2mA collector current and 6V collector-emitter voltage, it also specifies a saturation voltage of 300mV at 10mA collector current and 100mA base current. The 2PC1815GR-116 is housed in a TO-92-3 package suitable for through-hole mounting and is supplied on a tape and reel for automated assembly. This transistor is commonly employed in consumer electronics, industrial control systems, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
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