2PB710AS,115
TRANS PNP 50V 0.5A SMT3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. 2PB710AS-115 is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component offers a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 500 mA. It features a transition frequency of 140 MHz and a maximum power dissipation of 250 mW. The device exhibits a minimum DC current gain (hFE) of 170 at 150 mA and 10 V. Saturation voltage (Vce(sat)) is specified at 600 mV at 30 mA collector current and 300 mA base current. The collector cutoff current (ICBO) is a maximum of 10 nA. Operating temperature range extends up to 150°C (TJ). The transistor is supplied in an SMT3 MPAK package, with packaging provided on tape and reel (TR). This component is suitable for use in various industrial and consumer electronics applications requiring efficient signal amplification and switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 170 @ 150mA, 10V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
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