2PB710AR,115
TRANS PNP 50V 0.5A SMT3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor, part number 2PB710AR-115. This SMT3 packaged device offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 500mA. Featuring a transition frequency of 120MHz and a minimum DC current gain (hFE) of 120 at 150mA and 10V, this transistor is suitable for various switching and amplification applications. The device dissipates a maximum power of 250mW and operates at junction temperatures up to 150°C. Its TO-236-3, SC-59, SOT-23-3 package is designed for surface mounting. Applications include consumer electronics, industrial control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 150mA, 10V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
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