2PB710AQ,115
TRANS PNP 50V 0.5A SMT3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor (BJT), part number 2PB710AQ-115. This PNP transistor features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. It offers a transition frequency of 100MHz and a power dissipation of 250mW. With a specified minimum DC current gain (hFE) of 85 at 150mA and 10V, and a Vce(sat) of 600mV at 30mA and 300mA, this device is suitable for applications requiring precise control. The transistor is housed in a compact SMT3 (MPAK) package for surface mounting, delivered on a tape and reel for automated assembly. The operating junction temperature range extends to 150°C. Applications include general-purpose switching and amplification in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 150mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
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