2PB709AS,115
TRANS PNP 45V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor (BJT), part number 2PB709AS-115, offers a 45V collector-emitter breakdown voltage and a maximum collector current of 100mA. This device features a transition frequency of 80MHz and a maximum power dissipation of 250mW. The DC current gain (hFE) is a minimum of 290 at 2mA and 10V. This PNP transistor is available in a surface mount SMT3 (SC-59, SOT-23-3) package, supplied in tape and reel. It operates at temperatures up to 150°C. Applications include general-purpose amplification and switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 290 @ 2mA, 10V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
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