2PB709AR,115
TRANS PNP 45V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor, part number 2PB709AR-115, is engineered for demanding applications. This SMT3 packaged device features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 100mA. With a power dissipation of 250mW and a transition frequency of 70MHz, it offers robust performance. The device exhibits a minimum DC current gain (hFE) of 210 at 2mA collector current and 10V collector-emitter voltage. It is supplied in a TO-236-3, SC-59, SOT-23-3 package, also known as SMT3; MPAK, on tape and reel. Applications include general-purpose switching and amplification in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA, 10V |
| Frequency - Transition | 70MHz |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
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