2PB709AQW,115
TRANS PNP 45V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. 2PB709AQW-115 is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 45 V and a maximum collector current of 100 mA. It offers a typical DC current gain (hFE) of 160 at 2 mA collector current and 10 V collector-emitter voltage, with a transition frequency of 60 MHz. The device has a maximum power dissipation of 200 mW and operates at temperatures up to 150°C. The transistor is housed in a SMT3; MPAK package, specifically the TO-236-3, SC-59, SOT-23-3. This component is commonly employed in general-purpose switching and amplification circuits across various industries, including consumer electronics and industrial automation. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 2mA, 10V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 200 mW |
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