2PB709AQ,115
TRANS PNP 45V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor, part number 2PB709AQ-115, is designed for general-purpose amplification and switching applications. This device features a 45V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 60MHz and a maximum power dissipation of 250mW, it is suitable for operation up to 150°C junction temperature. The high DC current gain (hFE) of a minimum 160 at 2mA collector current and 10V Vce ensures efficient amplification. Packaged in a compact SMT3 (MPAK) form factor, specifically TO-236-3, SC-59, SOT-23-3, this component is supplied on a Tape & Reel for automated assembly. Applications include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 2mA, 10V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
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