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2PA1015Y,126

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2PA1015Y,126

TRANS PNP 50V 0.15A TO92-3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. PNP Bipolar Junction Transistor, part number 2PA1015Y-126. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 150mA. With a transition frequency of 80MHz, it offers a minimum DC current gain (hFE) of 120 at 2mA and 6V. The maximum power dissipation is 500mW. This component is housed in a TO-92-3 package with formed leads, suitable for through-hole mounting. Typical applications include general-purpose amplification and switching in consumer electronics and industrial control systems. It is supplied in Tape & Box packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 6V
Frequency - Transition80MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)150 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW

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