2PA1015GR,126
TRANS PNP 50V 0.15A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor, part number 2PA1015GR-126. This device features a breakdown voltage (Vceo) of 50V and a continuous collector current (Ic) capability of 150mA. With a transition frequency (fT) of 80MHz and a maximum power dissipation of 500mW, it is suitable for general-purpose amplification and switching applications. The minimum DC current gain (hFE) is specified at 200 at 2mA collector current and 6V collector-emitter voltage. The transistor exhibits a saturation voltage (Vce(sat)) of 300mV maximum at 10mA base current and 100mA collector current. It is housed in a TO-92-3 package and is supplied in Tape & Box packaging. This component finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
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