2N5551,412
TRANS NPN 160V 0.3A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. 2N5551-412 is a general-purpose NPN bipolar junction transistor. It features a maximum collector-emitter breakdown voltage of 160V and a continuous collector current capability of 300mA. The device offers a transition frequency of 300MHz and a power dissipation of 630mW. Minimum DC current gain (hFE) is 80 at 10mA collector current and 5V Vce. Collector cutoff current (ICBO) is a maximum of 50nA. Saturation voltage (Vce(sat)) is specified at a maximum of 200mV with 5mA base current and 50mA collector current. This through-hole component is supplied in a TO-92-3 package. Applications include general amplification and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 630 mW |
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