2N5551,116
TRANS NPN 160V 0.3A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. offers the 2N5551-116, an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a 160V collector-emitter breakdown voltage and a continuous collector current capability of 300mA. With a transition frequency of 300MHz and a maximum power dissipation of 630mW, it is suitable for use in consumer electronics, industrial control systems, and telecommunications equipment. The transistor exhibits a minimum DC current gain (hFE) of 80 at 10mA and 5V, with a saturation voltage of 200mV @ 5mA, 50mA. The 2N5551-116 is provided in a TO-92-3 through-hole package, supplied on tape and reel (TR). Its operating junction temperature ranges up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 630 mW |
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