2N5401,412
TRANS PNP 150V 0.3A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. 2N5401-412 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage (Vceo) of 150V and a continuous collector current (Ic) capacity of 300 mA. With a transition frequency (fT) of 300 MHz, it is suitable for moderate frequency operations. The transistor offers a minimum DC current gain (hFE) of 60 at 10 mA collector current and 5V collector-emitter voltage. Power dissipation is rated at 630 mW. The 2N5401-412 is supplied in a TO-92-3 package, designed for through-hole mounting. This device finds application in consumer electronics, industrial control, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 630 mW |
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