2N5401,116
TRANS PNP 150V 0.3A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP bipolar transistor, part number 2N5401-116, offers a 150V collector-emitter breakdown voltage and a continuous collector current of 300mA. This device features a transition frequency of 300MHz and a maximum power dissipation of 630mW. With a minimum DC current gain (hFE) of 60 at 10mA and 5V, it is suitable for a variety of applications. The transistor type is PNP, and it operates within an ambient temperature range up to 150°C. The 2N5401-116 is supplied in a TO-92-3 package and is available on tape and reel for automated assembly. Its specifications make it applicable in general-purpose amplification and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 630 mW |
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