2N4401,116
TRANS NPN 40V 0.6A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. 2N4401-116 is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 600mA. It boasts a transition frequency of 250MHz and a maximum power dissipation of 630mW. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 1V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 750mV at 50mA base current and 500mA collector current. With a cutoff current (ICBO) of 50nA, this transistor is suitable for applications requiring reliable switching and amplification. The 2N4401-116 is supplied in a TO-92-3 package, arranged on a tape and reel for efficient automated assembly. Typical industries utilizing this component include consumer electronics, industrial control, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 630 mW |
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