2N3906,116
TRANS PNP 40V 0.2A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. 2N3906-116 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. With a transition frequency of 250MHz and a maximum power dissipation of 500mW, it is suitable for use in consumer electronics, industrial control systems, and telecommunications equipment. The device offers a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 200mV at 5mA base current and 50mA collector current. This transistor is packaged in a TO-92-3 through-hole package and supplied on tape and reel. The operating junction temperature range is specified up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |
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