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2N3904,412

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2N3904,412

TRANS NPN 40V 0.2A TO92-3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. NPN Bipolar Junction Transistor, part number 2N3904-412. This general-purpose NPN transistor features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 200mA. It offers a transition frequency of 300MHz and a maximum power dissipation of 500mW. The device is housed in a TO-92-3 (TO-226AA) package and is suitable for through-hole mounting. Key electrical parameters include a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V Vce, and a saturation voltage (Vce(sat)) of 200mV at 5mA base current and 50mA collector current. The collector cutoff current (ICBO) is specified at a maximum of 50nA. This component is utilized in various industrial applications, including consumer electronics, industrial control, and telecommunications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition300MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max500 mW

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