2N3904,412
TRANS NPN 40V 0.2A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. NPN Bipolar Junction Transistor, part number 2N3904-412. This general-purpose NPN transistor features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 200mA. It offers a transition frequency of 300MHz and a maximum power dissipation of 500mW. The device is housed in a TO-92-3 (TO-226AA) package and is suitable for through-hole mounting. Key electrical parameters include a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V Vce, and a saturation voltage (Vce(sat)) of 200mV at 5mA base current and 50mA collector current. The collector cutoff current (ICBO) is specified at a maximum of 50nA. This component is utilized in various industrial applications, including consumer electronics, industrial control, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |
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