PRF13750HR9
RF MOSFET LDMOS NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. presents the PRF13750HR9, a high-power LDMOS RF MOSFET from their RF FETs, MOSFETs category. This component, identified by its Supplier Device Package NI-1230-4H, operates across a frequency range of 700MHz to 1.3GHz, delivering a typical gain of 20.6dB. Engineered for demanding applications, it supports an output power of 650W with a rated voltage of 105V. The PRF13750HR9 utilizes LDMOS technology for robust performance. Its dual configuration and Strip packaging (SOT-979A) are suitable for applications in broadcast, industrial, and telecommunications infrastructure where high RF power handling is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: StripDownload Free CAD Model:
Technical Details:
| Packaging | Strip |
| Package / Case | SOT-979A |
| Current Rating (Amps) | 10µA |
| Frequency | 700MHz ~ 1.3GHz |
| Configuration | Dual |
| Power - Output | 650W |
| Gain | 20.6dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4H |
| Voltage - Rated | 105 V |
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