MRFG35010R1
RF MOSFET PHEMT FET 12V NI360Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRFG35010R1 is a 10W RF power MOSFET utilizing pHEMT FET technology. Operating at 12V test voltage, this device offers 10dB gain at its 3.55GHz frequency. It is designed for high-power RF applications, delivering up to 10W output power. The component is supplied in a NI-360HF package and is available on Tape & Reel (TR). This RF FET is suitable for demanding applications in industries such as wireless infrastructure and defense.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-360HF |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 3.55GHz |
| Power - Output | 10W |
| Gain | 10dB |
| Technology | pHEMT FET |
| Noise Figure | - |
| Supplier Device Package | NI-360HF |
| Voltage - Rated | 15 V |
| Voltage - Test | 12 V |
| Current - Test | 180 mA |
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