MRFG35010MT1
RF MOSFET PHEMT FET 12V PLD-1.5Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRFG35010MT1 is a 12V RF MOSFET utilizing pHEMT FET technology. This component offers a 10dB gain at 3.55GHz, delivering a 9W output power. Designed for surface mount applications, it is supplied in a PLD-1.5 package on Tape & Reel (TR). The device is rated for 15V and tested at 12V with a current draw of 180mA. This RF power transistor is suitable for applications in wireless infrastructure and defense electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PLD-1.5 |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 3.55GHz |
| Power - Output | 9W |
| Gain | 10dB |
| Technology | pHEMT FET |
| Noise Figure | - |
| Supplier Device Package | PLD-1.5 |
| Voltage - Rated | 15 V |
| Voltage - Test | 12 V |
| Current - Test | 180 mA |
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