MRFG35010AR1
RF MOSFET PHEMT FET 12V NI360Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRFG35010AR1 is a 1W RF power transistor utilizing pHEMT FET technology. This device operates at 12V test voltage and delivers 10dB gain at 3.55GHz, with a typical drain current of 140mA. The NI-360HF package facilitates efficient thermal management and mounting. The MRFG35010AR1 is designed for high-performance RF applications, commonly found in wireless infrastructure, radar systems, and base station power amplifiers. Its robust construction and specified performance parameters make it a suitable choice for demanding RF designs. Supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-360HF |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 3.55GHz |
| Power - Output | 1W |
| Gain | 10dB |
| Technology | pHEMT FET |
| Noise Figure | - |
| Supplier Device Package | NI-360HF |
| Voltage - Rated | 15 V |
| Voltage - Test | 12 V |
| Current - Test | 140 mA |