MRFG35010ANT1
RF MOSFET PHEMT FET 12V PLD-1.5Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRFG35010ANT1 is a high-performance RF power MOSFET utilizing pHEMT FET technology. This device is designed for demanding RF applications, operating at a frequency of 3.55GHz. It delivers a significant output power of 9W with a gain of 10dB, tested at 130mA and 12V. The MRFG35010ANT1 is housed in a PLD-1.5 surface mount package, supplied on tape and reel for automated assembly. Its robust design makes it suitable for use in wireless infrastructure, base stations, and other high-frequency communication systems. The rated voltage is 15V, with a test voltage of 12V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PLD-1.5 |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 3.55GHz |
| Power - Output | 9W |
| Gain | 10dB |
| Technology | pHEMT FET |
| Noise Figure | - |
| Supplier Device Package | PLD-1.5 |
| Voltage - Rated | 15 V |
| Voltage - Test | 12 V |
| Current - Test | 130 mA |
Request a Quote
Clients Also Buy
BLF7G24LS-140,112
RF MOSFET LDMOS 28V SOT502B
BF1102R,115
RF MOSFET 5V 6TSSOP
BLF988S,112
RF MOSFET LDMOS 50V SOT539B
