Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

RF FETs, MOSFETs

MRFG35010

Banner
productimage

MRFG35010

RF MOSFET PHEMT FET 12V NI360

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. MRFG35010 is a pHEMT FET designed for high-power RF applications. This electronic component operates at a test voltage of 12V and delivers 9W of output power at a frequency of 3.55GHz with a gain of 10dB. The device is packaged in a NI-360HF, suitable for chassis mounting. Its robust design and performance characteristics make it a valuable component for demanding RF power amplification stages in the aerospace, defense, and communications infrastructure industries. The MRFG35010 facilitates efficient power conversion and signal amplification in critical systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseNI-360HF
Current Rating (Amps)-
Mounting TypeChassis Mount
Frequency3.55GHz
Power - Output9W
Gain10dB
TechnologypHEMT FET
Noise Figure-
Supplier Device PackageNI-360HF
Voltage - Rated15 V
Voltage - Test12 V
Current - Test130 mA

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MRF6S19200HSR5

RF MOSFET LDMOS 28V NI780

product image
MRF6V2010NBR1

RF MOSFET LDMOS 50V TO272-2

product image
MRF1513NT1

RF MOSFET LDMOS 12.5V PLD-1.5