MRFG35005ANT1
RF MOSFET PHEMT FET 12V PLD-1.5Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. MRFG35005ANT1 is a high-performance RF power transistor utilizing pHEMT FET technology. This surface-mount component, housed in a PLD-1.5 package, operates at 3.55GHz with a typical test voltage of 12V and a drain current of 80mA. It delivers a power output of 4.5W with a gain of 11dB, making it suitable for demanding applications in wireless infrastructure, telecommunications, and defense systems. The device is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PLD-1.5 |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 3.55GHz |
| Power - Output | 4.5W |
| Gain | 11dB |
| Technology | pHEMT FET |
| Noise Figure | - |
| Supplier Device Package | PLD-1.5 |
| Voltage - Rated | 15 V |
| Voltage - Test | 12 V |
| Current - Test | 80 mA |
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