MRFE6VP8600HSR6
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRFE6VP8600HSR6 is a 50V LDMOS RF power MOSFET designed for high-frequency applications. This dual-channel device delivers 125W of output power at 860MHz with a gain of 19.3dB. Featuring a NI-1230S package, it offers robust performance for demanding RF power amplifier designs. Its LDMOS technology ensures excellent linearity and efficiency, making it suitable for use in base station infrastructure and other high-power wireless communication systems. The component is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 860MHz |
| Configuration | Dual |
| Power - Output | 125W |
| Gain | 19.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230S |
| Voltage - Rated | 130 V |
| Voltage - Test | 50 V |
| Current - Test | 1.4 A |