MRFE6VP8600HSR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. MRFE6VP8600HSR5 RF MOSFET, LDMOS technology, is designed for high-power RF applications. This dual-channel device operates at 860MHz, delivering 125W of output power with a gain of 19.3dB. Tested at 50V, it features a 1.4A test current and is housed in a NI-1230S package, suitable for chassis mounting. The MRFE6VP8600HSR5 is supplied on a Tape & Reel (TR) for efficient assembly. This component is commonly utilized in industrial, medical, and defense systems requiring robust RF power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 860MHz |
| Configuration | Dual |
| Power - Output | 125W |
| Gain | 19.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230S |
| Voltage - Rated | 130 V |
| Voltage - Test | 50 V |
| Current - Test | 1.4 A |