MRFE6VP8600HR5
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRFE6VP8600HR5 is a high-power RF MOSFET designed for demanding applications. This LDMOS device operates at 860MHz, delivering a robust 125W of output power with a typical gain of 19.3dB at a test current of 1.4A. Rated at 50V test voltage, the MRFE6VP8600HR5 features the NI-1230 package, suitable for chassis mounting. Its advanced LDMOS technology ensures high efficiency and reliability. This component is widely utilized in base station infrastructure, broadcast transmitters, and other high-frequency power amplification systems where superior performance and ruggedness are paramount. The MRFE6VP8600HR5 is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 860MHz |
| Configuration | Dual |
| Power - Output | 125W |
| Gain | 19.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230 |
| Voltage - Rated | 130 V |
| Voltage - Test | 50 V |
| Current - Test | 1.4 A |
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