MRFE6VP5600HSR6
RF MOSFET LDMOS 50V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. MRFE6VP5600HSR6 is a high-power RF MOSFET utilizing LDMOS technology. Delivering 600W of output power at 230MHz, this device offers a 25dB gain and features a 50V test voltage. Designed for demanding applications, it operates with a 100mA test current and a rated voltage of 130V. The MRFE6VP5600HSR6 is supplied in a NI-1230-4S package, presented in Tape & Reel (TR) packaging. This component is suitable for use in industrial, medical, and defense applications requiring robust RF power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 230MHz |
| Configuration | Dual |
| Power - Output | 600W |
| Gain | 25dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4S |
| Voltage - Rated | 130 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |