MRFE6VP100HSR5
RF MOSFET LDMOS 50V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
The NXP USA Inc. MRFE6VP100HSR5 is a high-performance RF MOSFET utilizing LDMOS technology. This surface-mount component, housed in an NI-780S-4L package and supplied on tape and reel, delivers 100W of output power at 512MHz with a 26dB gain. Tested at 50V with a current of 100mA, it is rated for a voltage of 133V. This device is suitable for demanding applications in industrial, medical, and defense sectors requiring robust RF power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 512MHz |
| Power - Output | 100W |
| Gain | 26dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L |
| Voltage - Rated | 133 V |
| Voltage - Test | 50 V |
| Current - Test | 100 mA |
Request a Quote
Clients Also Buy
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
MRF6V2010NBR1
RF MOSFET LDMOS 50V TO272-2
MRF1513NT1
RF MOSFET LDMOS 12.5V PLD-1.5
